? semiconductor components industries, llc, 2001 january, 2000 rev. 0 1 publication order number: mmdl101t1/d mmdl101t1 schottky barrier diode schottky barrier diodes are designed primarily for highefficiency uhf and vhf detector applications. readily available to many other fast switching rf and digital applications. ? very low capacitance e less than 1.0 pf @ zero volts ? low noise figure e 6.0 db typ @ 1.0 ghz ? device marking: 4m maximum ratings symbol rating value unit v r reverse voltage 7.0 vdc thermal characteristics symbol characteristic max unit p d total device dissipation fr5 board,* t a = 25 c derate above 25 c 200 1.57 mw mw/ c r ja thermal resistance junction to ambient 635 c/w t j , t stg junction and storage temperature range 55 to +150 c *fr5 minimum pad electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m a) v (br)r 7.0 10 e volts diode capacitance (v r = 0, f = 1.0 mhz, note 1) c t e 0.88 1.0 pf reverse leakage (v r = 3.0 v) i r e 20 250 nadc noise figure (f = 1.0 ghz, note 2) nf e 6.0 e db forward voltage (i f = 10 ma) v f e 0.5 0.6 vdc *notes on next page http://onsemi.com 1.0 pf schottky barrier diode device package shipping ordering information mmdl101t1 sod323 3000 / t ape & reel plastic sod323 case 477 2 1 1 cathode 2 anode
mmdl101t1 http://onsemi.com 2 typical characteristics figure 1. reverse leakage t a , ambient temperature ( c) figure 2. forward voltage v f , forward voltage (volts) figure 3. capacitance v r , reverse voltage (volts) figure 4. noise figure p lo , local oscillator power (mw) c, capacitance (pf) nf, noise figure (db) , forward current (ma) i f , reverse leakage ( a) i r 0.1 0.2 0.5 1.0 2.0 5.0 10 11 10 9 8 7 6 5 4 3 2 1 0 1.0 2.0 3.0 4.0 1.0 0.9 0.8 0.7 0.6 0.3 0.4 0.5 0.6 100 10 1.0 0.1 0.7 0.8 30 40 50 60 70 80 100 1.0 130 110 120 90 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 figure 5. noise figure test circuit local oscillator uhf noise source h.p. 349a noise figure meter h.p. 342a diode in tuned mount if amplifier nf = 1.5 db f = 30 mhz v r = 3.0 vdc local oscillator frequency = 1.0 ghz (test circuit figure 5) t a = -40 c t a = 85 c t a = 25 c note 1 e c c and c t are measured using a capacitance bridge (boonton electronics model 75a or equivalent). note 2 e noise figure measured with diode under test in tuned diode mount using uhf noise source and local oscil- lator (lo) frequency of 1.0 ghz. the lo power is ad- justed for 1.0 mw. if amplifier nf = 1.5 db, f = 30 mhz, see figure 5. notes on testing and specifications mmbd110t1 mmbd110t1 mmbd110t1 mmbd110t1
mmdl101t1 http://onsemi.com 3 package dimensions sod323 plastic package case 47702 issue a notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with solder plating. dim min max min max inches millimeters a 1.60 1.80 0.063 0.071 b 1.15 1.35 0.045 0.053 c 0.80 1.00 0.031 0.039 d 0.25 0.40 0.010 0.016 e 0.15 ref 0.006 ref h 0.00 0.10 0.000 0.004 j 0.089 0.177 0.0035 0.0070 k 2.30 2.70 0.091 0.106 note 3 a k 1 2 d b e h c j style 1: pin 1. cathode 2. anode 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches sod323 soldering footprint
mmdl101t1 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmdl101t1/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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